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Dr. P. R. SEKHAR REDDY M.Sc., Ph.D.

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Education
Ph. D        2015-2020
Semiconductor Engineering Major, School of Semiconductor and Chemical Engineering, Jeonbuk National University (JBNU), South Korea, 
M. Sc       2012-2014
B. Sc        2008-2011
Department of Physics, S.V. University, Tirupati, Andhra Pradesh, India
S.V. Arts College, S.V. University, Tirupati, Andhra Pradesh, India.
Research Experience
Sep.2021─Feb.2023
Department of Electronics Engineering, Pusan National University, Busan, South Korea.
Mar.2022-Feb.2023
Laboratory of Magnetism and Magnetic Material, Science and Technology Advance Institute, Van Lang University, Ho Chi Minh City, Vietnam.
Mar.2020─Aug.2021
School of Material Science and Engineering, Pusan National University, Busan, South Korea.

Prizes & Awards: 

Best Researcher Award: International Research Excellent Best Paper Awards, Nov.2022.
❖ Paper Title: “Enhanced Resistive Switching Properties of the HfAlOx/ZrO2 -based RRAM devices”. (PNS:MI 32 (2022) 602-607).
Best Paper Award : Grand Prize in Haedong, The Institute of Electronics and Information Engineering IEIE

Journal of Semiconductor Technology and Science (JSTS) Nov.2020.

❖ Paper Title: “Modification of Electrical Properties of Ti/p-Type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer” (IEIE JSTS, 16 (2016) 664-674).

Best Paper Award-IEIE
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Research Publications

  1. V Manjunath and P. R. Sekhar Reddy "Advancing the Structural and Electrical Analysis of Ni/Cr/Bi2O3/n-GaN for Improved Schottky Barrier Diode" (Surface and Interfaces) (Submitted) (IF:6.20)

  2. P.R. Sekhar Reddy “Organic-Inorganic Hybrid Interfaces Tailoring Schottky Contacts for Next-Generation Devices". Springer Proceedings in Materials (Book Chapter)

  3. P.R. Sekhar Reddy "Harnessing the Power of β-Ga2O3 Schottky Contacts for Next-Generation Semiconductor Devices". Springer Proceedings in Materials (Book Chapter)

  4. P. R. Sekhar Reddy and "Advances in Semiconductor Wafer Bonding for Photovoltaic Solar Cells: A Comprehensive Review"  (CRC-Book Chapter)

  5. P.R. Sekhar Reddy “Advancements in Artificial Synapses: The role of Fluorite–Structured Ferroelectrics”. Nano Trends 9 (2025) 100074.

  6. K. Poshan Kumar Reddy, B. Prasanna Lakshmi, and P. R. Sekhar Reddy "Enhanced Light Trapping on Silicon Substrates Using Non-Uniform Disordered Dendritic Structures for Water Splitting and CO2 Reduction" ICMM-2024 ( Accepted).

  7. B. Nagarjuna Reddy, S. Saravanan, V. Manjunath and P. R. Sekhar Reddy "Next-Gen Healthcare: The Role of MEMS and Nanomaterials in Enhancing Diagnostic and Therapeutic Outcomes"  "Biomaterials Connect"  1, 004, 2024 (1-7)

  8. V. Manjunatha, Chaitanya Kumar Kunapalli, M. Vanic, R. Jaya Madhuric, Sameh Abdallah Ragabd, Mohammad Rezaul Karim, N. Nanda Kumar Reddy, K. Munirathnam, P.R. Sekhar Reddy, S. Himagirish Kumar, Tae J. Koi, Nunna Guru Prakash, P. Rosaiahk, Effects of Zn doped MoO3 nanocomposite interlayer on electrical and surface chemical state properties of Ni/Cr/n-GaN Schottky Junction "Materials Science & Engineering B"  308 (2024) 117602 (IF: 3.9)

  9. P.R. Sekhar Reddy “A Review of Transforming Neuromorphic Computing with 2D Material Memtransistors”. Micromaterials and Interfaces 2,1 (2024)1-15.

  10. P.R. Sekhar Reddy, N.V. Raveendra and Adem Sreedhar, “Enhanced Remnant Polarization in Ferroelectric HfZrO Thin Film Capacitors Through Mo Top Electrode Post-Metallization Annealing”. Physica B: Condensed Matter 685, 15, (2024) 416024. (If. 2.80).

  11. G. Nagaraju, N.V. Srihari, M. Renuka, B. Rajitha, S. Basamma, S. H. Kumar, P. R. Sekhar Reddy, M. Vani R. J. Madhuri, V. Manjunath  “Microstructural and current-voltage characteristics in Mo/HfO2/n‐Si based metal-insulator-semiconductor (MIS) diode using different methods for optoelectronic device applications "IJFMR-International Journal of Multidisciplinary Research " 6,2, 1-13 2024  (IF: 9.24).

  12. P.R Sekhar Reddy, "Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications". Micromaterials and Interfaces, 1,1, 2023. 

  13. P.R. Sekhar Reddy, N. V Raveendra, Y Anil Kumar and G Murali. “Enhanced Resistive Switching Properties of the HfAlOx/ZrO2 -based RRAM devices”. Progress in Natural Science: Materials International, 32, 5, 602-607 (2022). (I.F: 4.269)

  14. P.R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, M. H. Park and C. J. Choi. “Annealing Effect on the Structural, Optical, Electrical, and Current Transport Properties of Au/CuPc/n-Si Organic-Inorganic Schottky barrier diode”. Applied Physics A 127:803 (2021) 1-12. (IF: 2.983)

  15. Dong-Hyun Lee, Young Hwan Lee, Kun Yang, Ju-Yong Park, P.R. Sekhar Reddy, Thomas Mikolajick, Jacob Jones, U. Schroeder, and Min Hyuk Park. “Study Domains and Domains Dynamics in Fluorite-Structure Ferroelectrics”. Applied Physics Reviews 8, (2021) 021312. (IF: 19.527)

  16. H.J Kim, B. Naresh, I.H Hee-Je Kim, Bandari naresh, In-ho Cho, Jin-Soo Bak, Shamim Ahmed Hira, P.R Sekhar Reddy, TNV Krishna, K D Kumar, B.A. Mola, Yedluri Anilkumar. “An Advanced Nano-sticks & Flake-type Architecture of Manganese-cobalt Oxide as an Effective Electrode Material for Supercapacitor Applications”. Journal of Energy Storage 40, (2021) 102702. (IF:9.40)

  17.  J. Y. Park, K. Yang, D. H. Lee, S. H. Kim, Y. H. Lee, P. R. Sekhar Reddy, J. L. Jones, and M. H. Park. “A Perspective on Semiconductor Devices Based on Fluorite Structured Ferroelectrics from The Materials-Device Integration Perspective”. Journal of Applied Physics 128, (2020). (IF: 3.20)

  18. P.R. Sekhar Reddy, V. Janardhanam, Kyu-Hwan Shim, Sung-Nam Lee, A. Ashok Kumar, V. R. Reddy, and Chel Jong Choi. “Temperature-Dependent Schottky Barrier Characteristics of Al/n-type Si Schottky Diode with Au-CuPc Interlayer”. Thin Solid Films 713, (2020) 138343. (IF: 2.183).

  19. Young-Seok Lee, Yedluri Anil Kumar, S. Sambasivam, Shamim Ahmed Hira, Kamran Zeb, Waqar Uddin, P.R. Sekhar Reddy, K. D. Kumar, Ihab M. Obaidat, Hee-Je Kim, Sung shin Kim. “Nano-Structure & Nano-objects, 24 (2020) 100618. (IF: 5.910)

  20. P.R. Sekhar Reddy, V. Janardhanam, Hoon-Ki Lee, Kyu-Hwan Shim, Sung-Nam Lee, V. Rajagopal Reddy, Chel-Jong Choi. “Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-type β-Ga2O3” Journal of Electronic Materials 49, (2020) 297-305. (IF: 2.047)

  21. P.R. Sekhar Reddy, V. Janardhanam, Kyu-Hwan Shim, V. Rajagopal Reddy, Sung-Nam Lee and Chel-Jong Choi. “Temperature-Dependent Schottky Barrier Parameters of Ni/Au on n-Type (001) β-Ga2O3 Schottky Barrier Diode”. Vacuum 171 (2020), 109012. (IF: 4.11)

  22. K. Ouduangvilai, H.-K. Lee, V. Janardhanam, P.R. Sekhar Reddy, Chel-Jong Choi, Kyu-Hwan Shim. “A Study of Gate Leakage Current on AlGaN/GaN MOS-HEMTs with Atomic Layer Deposited Al2O3 Gate Oxide”. Journal of Semiconductor Technology and Science 19 6 (2019) 540-550. (IF: 2.10)

  23. M. Uma, N. Balaram, P.R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, Hyung-Joong Yun, Sung- Nam Lee, And Chel-Jong Choi. “Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High k Lanthanum Oxide Insulating Layer”. Journal of Electronic Materials 48 7 (2019) 4217-4225. (IF: 2.047)

  24. V. Janardhanam, I. Jyothi, P. R. Sekhar Reddy, Jae-Hee Cho, J.-M. Cho, Chel-Jong Choi, Sung- Nam Lee, V. R. Reddy. “Double Gaussian Barrier Distribution of Permalloy (Ni0.8Fe0.2) Schottky Contacts to n-type GaN”. Superlattices and Microstructures 120 (2018) 508–516. (IF: 3.220)

  25. P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, H.S. Chang, Sung- Nam Lee, V. Rajagopal Reddy, Chel- Jong Choi. “Effect of Copper Phthalocyanine Thickness on Surface Morphology, Optical and Electrical Properties of Au/CuPc/n-Si Heterojunction”. Applied Physics A: Materials Science and Processing 124 (2018) 115. (IF: 2.983)

  26. N. Balaram, V. R. Reddy, P. R. Sekhar Reddy, V. Janardhanam, Chel-Jong Choi. “Microstructural, Chemical States and Electrical Properties of Au/CuO/n-InP Heterojunction with a Cupric Oxide Interlayer”. Vacuum 152 (2018) 15-24. (IF: 4.11)

  27. V. Manjunath, V. Rajagopal Reddy, P. R. Sekhar Reddy, V. Janardhanam, Chel-Jong Choi. “Electrical and Frequency-Dependent Properties of Au/Sm2O3/n-Gan MIS Junction with A High-K Sm2O3 as Interlayer”. Current Applied Physics 17 (2017) 980-988. (IF: 2.856)

  28. P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, H.-S. Chang, Sung- Nam Lee, V. R. Reddy, Chel- Jong Choi. “Microstructural and Electrical Properties of Al/n-Type Si Schottky Diodes with Au- CuPc Composite Films as Interlayer”. Superlattices and Microstructures 111 (2017) 506-517. (IF: 3.220)

  29. V. Rajagopal Reddy, P. R. Sekhar Reddy, I. N. Reddy and Chel-Jong Choi. “Microstructural, Electrical and Carrier Transport Properties of Au/NiO/n-GaN Heterojunction with a Nickel Oxide Interlayer”. RSC Advances 6 (2016) 105761. (IF: 4.036)

  30. P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, Shim-Hoon Yuk, V. Rajagopal Reddy, Jae-Chan Jeong, Sung- Nam Lee, and Chel-Jong Choi. “Modification of Electrical Properties of Ti/p-Type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer”. Journal of Semiconductor Technology and Science 16 (2016) 664-674. (IF: 2.352)

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