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Research Interest

             Our Research in Semiconductor materials and device characterization with the main focus on the area of functional oxide materials for more energy-efficient electronic devices and energy harvesting devices to resolve energy issues of state-of-the-art electronic devices. The potential to drive advancements in technology and contribute to various industries. It's exciting to see how your expertise in thin film depositions, characterization, and nanoscale electronic device fabrication can shape the future of electronics and materials science.

            Our Research in Semiconductor materials and device characterization with the main focus on the area of functional oxide materials for more energy-efficient electronic devices and energy harvesting devices to resolve energy issues of state-of-the-art electronic devices. The potential to drive advancements in technology and contribute to various industries. It's exciting to see how your expertise in thin film depositions, characterization, and nanoscale electronic device fabrication can shape the future of electronics and materials science.

1. Organic-Inorganic Hybrid Schottky Contact

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        Schottky diodes with low turn-on voltage (Von), high forward current density, and fast switching speed properties are ideal candidates for low switching/conduction losses and high- frequency operations. The organic-inorganic hybrid device is expected to not only permit a wide-ranging selection of emitter and carrier transport materials but also provide an alternative approach to constructing high-performance electronic devices taking advantage of both organic and inorganic semiconductors. To modify the electrical properties of a Schottky diode using an organic interlayer between the metal and semiconductor, which leads to a novel approach in the construction of high-performance electronic devices.

2. Gallium Oxide (β-Ga2O3) Power Devices:

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         Gallium Oxide (β-Ga2O3) has gained significant attention in recent years for its potential use in power electronics devices. Its unique combination of properties, including a wide bandgap, high breakdown voltage, and high electron mobility, makes it a promising candidate for high-power and high-voltage applications. As the field of power electronics continues to evolve, β-Ga2O3 has the potential to play a vital role in creating more efficient, compact, and high-performance power conversion systems that are essential for various applications in our modern world.

3. Non-Volatile Memory devices:

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         Non-volatile memory devices are storage devices that retain their data even when they are powered off. They are important in modern computing because they enable long-term storage of data that can be accessed quickly and reliably. Some examples of non-volatile memory devices include: a resistive switching memory device, also known as a "resistive memory" or "memristive device," is a type of non-volatile memory technology that relies on changes in resistance to store and retrieve data. These devices are designed to emulate certain aspects of the behavior of biological synapses, which are the connections between neurons in the brain that facilitate learning and memory.

4. Neuromorphic Computing System:-

 1. Artificial Synapses

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            Artificial synaptic devices are electronic components designed to replicate the functionality of biological synapses in the context of neuromorphic engineering and artificial neural networks. These devices play a crucial role in creating brain-inspired computing systems that can perform tasks such as pattern recognition, learning, and adaptive behavior.

2. Neuronal Devices

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        In the field of neuromorphic engineering, researchers are working on creating electronic systems that emulate the behavior of neurons and synapses, allowing for brain-inspired computation. While not referred to as "neuronal transistors," these efforts involve using technologies like memristors, phase-change materials, and other emerging materials to simulate neural behavior in electronic circuits.

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